View 2N611103_1040443.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
2N6111
SILICON PNP SWITCHING TRANSISTOR
s
s
STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR
s
APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power switching and linear applications.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEX V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value -40 -40 -30 -5 -7 -3 40 -65 to 150 150
Unit V V V V A A W
o o
C C
December 2003
1/4
2N6111
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = - 1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -40 V V CE = -30 V V CE = -20 V V EB = -5 V I C = -0.1 A -30 T C = 150 o C Min. Typ. Max. -0.1 -2 -1 -1 Unit mA mA mA mA V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CER(sus) Collector-Emitter Sustaining Voltage (I C = 0) V CE(sat) V BE(on) h FE h fe fT C cbo Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Transition-Frequency Collector-base Capacitance
I C = -0.1 A
R BE = 100
-40
V
I C = -2 A I C = -7 A I C = -2 A I C = -7 A I C = -3 A I C = -7 A I C = -0.5 A f = 50 KHz I C = -0.5 A V CB = -10 V
I B = -0.2 A I B = -3.0 A V CE = -4 V V CE = -4 V V CE = -4 V V CE = -4 V V CE = -4 V V CE = -4 V f = 1 MHz 30 2.3 20 4
-1 -3.5 -5 -3 150
V V V V
MHz 250 pF
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2/4
2N6111
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
3/4
2N6111
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
4/4

▲Up To Search▲

Price & Availability of 2N611103

	To Download 2N611103 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .